Tuning a strain-induced orbital selective Mott transition in epitaxialVO2
نویسندگان
چکیده
منابع مشابه
Orbital-selective Mott transition out of band degeneracy lifting.
We outline a general mechanism for orbital-selective Mott transition, the coexistence of both itinerant and localized conduction electrons, and show how it can take place in a wide range of realistic situations, even for bands of identical width and correlation, provided a crystal field splits the energy levels in manifolds with different degeneracies and the exchange coupling is large enough t...
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We observed a novel orbital selective Mott transition in Ca(1.8)Sr(0.2)RuO(4) by angle-resolved photoemission. While two sets of dispersing bands and the Fermi surface associated with the doubly degenerate d(yz) and d(zx) orbitals are identified, the Fermi surface associated with the wider d(xy) band is missing as a consequence of selective Mott localization. Our theoretical calculations demons...
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We calculate the spectra and spin susceptibilities of a Hubbard model with two bands having different bandwidths but the same on-site interaction, with parameters close to the orbital-selective Mott transition, using dynamical mean-field theory. If the Hund's rule coupling is sufficiently strong, one common energy scale emerges which characterizes both the location of kinks in the self-energy a...
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We explore the effect of pressure on the electronic properties of the ferromagnetic Mott-Hubbard insulator YTiO3. We show that the pressure-induced insulator-metal transition is accompanied by anisotropic structural changes driven by the competition between strongly orbital dependent one-electron hopping and strong, multiorbital electronic correlations in the real crystal structure of YTiO3. Ou...
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Michel Ferrero,1,2 Pablo S. Cornaglia,1,3 Lorenzo De Leo,1 Olivier Parcollet,2 Gabriel Kotliar,4 and Antoine Georges1 1Centre de Physique Théorique, Ecole Polytechnique, CNRS, 91128 Palaiseau Cedex, France 2Institut de Physique Théorique, CEA, IPhT, CNRS, URA 2306, 91191 Gif-sur-Yvette, France 3Centro Atómico Bariloche and Instituto Balseiro, CNEA, CONICET, 8400 Bariloche, Argentina 4Department...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2016
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.93.241110